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ts12011/ts12012 page 1 ? 2014 silicon laboratories, inc. all rights reserved. features ? nanowatt analog? op amp, comparator, and 0.58v reference in single 4 mm 2 package ? ultra low total supply current: 1.6a (max) ? supply voltage range: 0.8v to 2.5v ? internal 0.58v reference ? op amp and comparator input ranges are rail-to-rail ? unity-gain stable op amp with a vol = 104db ? op amp output: rail-to-rail and phase- reversal-free ? internal 7.5mv co mparator hysteresis ? 20s comparator propagation delay ? resettable latched comparator ? ts12011: push-pull rail-to-rail output ts12012: open-drain output applications battery-powered systems single-cell and +1.8v, +2.5v powered systems low-frequency, local-area alarms/detectors smoke detectors and safety sensors infrared receivers for remote controls instruments, terminals, and bar-code readers smart-card readers description the ts12011/ts12012 combine a 0.58v reference, a 20s comparator, and a unity-gain stable op amp in a single ic. all three devices operate from a single 0.8v to 2.5v power supply and consume less than 1.6a total supply current. supply current for all three functions over 0.8v to 2.5v supply range is guaranteed 1.6a max. super-flexible for crafting voltage detectors, timers, and wake-up circuits, these bundled functions exhibit low shoot-through currents an d graceful power-down modes. both the comparator and the op amp feature rail-to-rail input stages. the latching comparator exhibits 7.5mv of internal hysteresis for clean, chatter-free output switching. when compared against similar products, the ts12011/ts12012 offer a factor-of-20 lower power consumption and at least a 55% reduction in pcb area. the ts12011?s comparator has a push-pull output stage with break-before-make switches for low shoot- through currents. the ts12012?s comparator has an open-drain output having no parasitic diode to vdd, for interfacing to wired-or or mixed-voltage logic. the ts12011 and the ts12012 are fully specified over the -40c to +85c temperature range and each is available in a low-profile, 10-pin 2x2mm tdfn package with an exposed back-side paddle. a 0.8v/1.5a nanopower op amp, comparator, and reference typical application circuit part number comparator output stage ts12011 push-pull ts12012 open-drain
ts12011/ts12012 page 2 ts12011/12 rev. 1.0 absolute maximum ratings supply voltage (v dd to v ss ) ................................................. +2.75 v input voltage ampin+, ampin-????????.?.v ss ? 0.3v to v dd + 0.3v compin+, compin-?..........................v ss ? 0.3v to v dd + 0.3v lhdet ????????????..??.?.. v ss - 0.3v to +5.5v output voltage ampout, refout???.????.....v ss ? 0.3v to v dd + 0.3v compout (ts12011)????.........?v ss - 0.3v to v dd + 0.3v compout (ts12012)??...?..????.?v ss - 0.3v to +5.5v differential input voltage (ampin, compin)........................ 2.75v output current ampout, compout???????...............................50ma short-circuit duration (refout, ampout, compout)??????...?.continuous continuous power dissipation (t a = +70c) 10-pin tdfn (derate at 13.48mw/c above +70c) ......... 1078mw operating temperature range ................................. -40c to +85c junction temperature??????????????..??+150c storage temperature range .................................. -65c to +150c lead temperature (soldering, 10s) ...................................... +300c electrical and thermal stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only and functional operati on of the device at these or any other condition beyond those indicated in the op erational sections of the specifications is not implied. ex posure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. package/ordering information order number part marking carrier quantity order number part marking carrier quantity ts12011itd1022 aal tape & reel ----- ts12012itd1022 aam tape & reel ----- TS12011ITD1022T tape & reel 3000 ts12012itd1022t tape & reel 3000 lead-free program: silicon labs supplies only lead-free packaging. consult silicon labs for products specified with wider operating temperature ranges.
ts12011/ts12012 ts12011/12 rev. 1.0 page 3 electrical characteristics v dd = 0.8v; v ss = 0v; v compin+/- = 0v; v ampin+/- = 0v; v ampout = (v dd + v ss )/2; v compout = hiz; t a = -40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1. parameter symbol conditions min typ max units supply voltage v dd 0.8 2.5 v supply current i dd refout = open t a = +25c 1.1 1.6 a -40c t a 85c 2 reference section reference output voltage v refout v dd = 0.8v or 2.5v t a = +25c 555 577 600 mv -40c t a 85c 552 602 reference load regulation i out = 100na 0.5 % amplifier section input offset voltage v os v ampin+/- = v dd or v ampin+/- = v ss t a = +25c 3.5 mv -40c t a 85c 7 input bias current i in+ , i n- v ampin+, v ampin- = (v dd ? v ss )/2 20 na input offset current i os v a mpin+, v a mpin- = (v dd ? v ss )/2 0.01 5 na input common-mode range ivr guaranteed by input offset voltage test v ss v dd v large-signal voltage gain a vol r l = 100k to v dd /2; v ss + 50mv < v out < v dd - 50mv 90 104 db gain-bandwidth product gbwp r l = 100k ? //20pf 15 khz phase margin m r l = 100k ? //20pf 70 deg slew rate sr r l = 100k ? //20pf 6 v/ms common-mode rejection ratio cmrr 0v v in(cm) 2.1v; v dd = 2.5v 50 75 db power-supply rejection ratio psrr 0.65v (v dd - v ss ) 2.5v 50 75 db output high voltage v oh r l = 100k ? to v ss v dd ? 50mv v output low voltage v ol r l = 100k ? to v dd v ss + 50mv v output source current i sc+ v ampout = v ss 0.28 ma output sink current i sc- v a mpout = v dd 4.5 ma output load capacitive drive c out 50 pf comparator section input offset voltage v os v ampin+/- = v dd ; v ampin+/- = v ss ; see note 2 t a = +25c 4.5 mv -40c t a 85c 8 input hysteresis v hb see note 3 7.5 mv input bias current i in+ , i n- v compin+, v compin- = v dd or v ss 20 na input offset current i os v compin+, v compin- = v dd or v ss 0.2 5 na input voltage range ivr guaranteed by input offset voltage test v ss v dd v common-mode rejection ratio cmrr 0v v in(cm) 2.1v; v dd = 2.5v 50 60 db power-supply rejection ratio psrr 0.8v (v dd - v ss ) 2.5v 50 70 db low-to-high propagation delay t pd+ v overdrive = 10mv; see note 4 ts12011 30 s v overdrive = 100mv; see note 4 20 s high-to-low propagation delay t pd- v overdrive = 10mv; see note 4 30 s v overdrive = 100mv; see note 4 20 s output high voltage v oh ts12011; i out = -100 a v dd ? 0.1 v output low voltage v ol ts12011 ; i out = 100 a v ss + 0.1 v output low voltage v ol ts12012 ; i out = 100 a v ss + 0.11 v output short-circuit current i sc sourcing; v compout = v ss 0.1 ma ts12011 ; sinking; v compout = v dd 0.5 ma ts12012 ; sinking; v compout = v dd 1.4 ma open drain leakage ts12012 ; v compout = 5v 20 na
ts12011/ts12012 page 4 ts12011/12 rev. 1.0 v dd = 0.8v, v ss = 0v, v compin+/- = 0v, v ampin+/- = 0v, v ampout = (v dd + v ss )/2, v compout = hiz. t a = -40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1. parameter symbol conditions min typ max units control pin section lhdet v dd ? 1.1v 0.1 v 1.1v < v dd ? 2.5v 0.2 lhdet v dd ? 1.1v v dd - 0.1 v 1.1v < v dd ? 2.5v 1 lhdet = v ss ; v lhdet note 1: all devices are 100% production tested at t a = +25c and are guaranteed by characterization for t a = t min to t max , as specified. note 2: v os is defined as the center of the hysteresis band at the input minus v in(cm). note 3: the hysteresis-related trip points are defined by the edges of t he hysteresis band and measured with respect to the center of the hysteresis band. note 4: the propagation delays are specified wi th an output load capacitance of c l = 15pf. v overdrive is defined above and is beyond the offset voltage and hysteresis of the comparator input.
ts12011/ts12012 ts12011/12 rev. 1.0 page 5 typical performance characteristics v dd = 2.5v; v ss = 0v; v ampout = hiz; v compout = hiz, unless otherwise noted. typical values are at t a = +25c. supply voltage - v supply current - a 1.23 1.65 1.2 0.8 supply current vs supply voltage and temperature 0.8 2.08 1.4 1.6 1 2.5 supply voltage - v short-circuit current - ma 1.23 1.65 8 0 20 op amp short-circuit current vs supply voltage 0.8 2.08 12 16 4 2.5 supply voltage - v short-circuit current - ma 8 0 comparator short-circuit current vs supply voltage 12 16 4 1.23 1.65 0.8 2.08 2.5 temperature - oc reference voltage - v -15 10 0.583 0.581 reference voltage vs temperature -40 35 0.585 60 85 0.587 0.589 t a = +85oc t a = +25oc t a = -40oc v ampout = v ss v compout = v ss supply voltage - v short-circuit current - ma 1.23 1.65 32 19 op amp short-circuit current vs supply voltage 0.8 2.08 38.5 45 25.5 2.5 supply voltage - v short-circuit current - ma 12 0 comparator short-circuit current vs supply voltage 18 6 1.23 1.65 0.8 2.08 2.5 v ampout = v dd v compout = v dd
ts12011/ts12012 page 6 ts12011/12 rev. 1.0 typical performance characteristics v dd = 2.5v; v ss = 0v; v ampout = hiz; v compout = hiz, unless otherwise noted. typical values are at t a = +25c. source current - ma v dd - v oh - v 1 2 0.4 0 comparator output voltage high vs source current 0 3 0.6 0.2 4 sink current - ma v ol - v 1 2 0.1 0 comparator output voltage low vs sink current 0 3 0.2 0.3 0.4 source current - ma v dd - v oh - v 2 4 0.1 0 0.4 op amp output voltage high vs source current 0 6 0.2 0.3 8 sink current - ma v ol - v 2 4 0.14 0.07 0.35 0 6 0.21 0.28 op amp output voltage low vs sink current 0.5 0.6 0 supply voltage - v input offset voltage - v -200 -300 100 -100 0 200 op amp input offset voltage vs supply voltage 1.23 1.65 0.8 2.08 2.5 300 v incm = v dd v incm = v ss supply voltage - v input offset voltage - mv -0.5 -1 1 0 0.5 comparator input offset voltage vs supply voltage 1.23 1.65 0.8 2.08 2.5 v incm = v dd v incm = v ss
ts12011/ts12012 ts12011/12 rev. 1.0 page 7 typical performance characteristics v dd = 2.5v; v ss = 0v; v ampout = hiz; v compout = hiz, unless otherwise noted. typical values are at t a = +25c. ts12011 comparator propagation delay (t pd+ ) v dd = 2.5v, v overdrive = 100mv, c load = 15pf 20s/div ts12011 comparator propagation delay (t pd- ) v dd = 2.5v, v overdrive = 100mv, c load = 15pf 20s/div input 50mv/div output 1v/div input 50mv/div output 1v/div supply voltage - v input offset voltage - mv 0.4 0.2 0.8 0.6 op amp input offset voltage vs input common-mode voltage 0.2 0.4 0 0.6 0.8 v dd = 0.8v supply voltage - v input offset voltage - mv 0.5 0.4 0.8 0.6 0.7 op amp input offset v oltage vs input common-mode voltage 0.5 1 01.5 2 v dd = 2.5v 2.5 ts12011 op amp small-signal transient response v dd = 2.5v, r load = 100k? , c load = 15pf 200s/div ts12011 op amp large signal transient response v dd = 2.5v, r load = 100k? , c load = 15pf 500s/div input 50mv/div output 50mv/div input 1v/div output 1v/div
ts12011/ts12012 page 8 ts12011/12 rev. 1.0 pin functions pin ts12011 pin ts12012 name function 1 1 ampout amplifier output 2 2 ampin- amplifier inverting input 3 3 ampin+ amplifier non-inverting input 4 4 vss negative supply voltage. 5 5 lhdet typical performance characteristics v dd = 2.5v; v ss = 0v; v ampout = hiz; v compout = hiz, unless otherwise noted. typical values are at t a = +25c. frequency - hz phase - degrees -150 -200 0 -100 -50 -250 gain and phase vs frequency 1k 10k 100 100k 50 100 0 -10 30 10 20 -20 40 50 gain - db gain phase 70o 14khz v dd = 0.8v t a = +25oc r l = 100k c l = 20pf a vcl = 1000v/v
ts12011/ts12012 ts12011/12 rev. 1.0 page 9 block diagram theory of operation the ts12011 and ts12012 are multi-purpose cmos building blocks intended for creating analog glue functions around battery-powered uc systems. there is an op amp for signal conditioning, a comparator for detection, and a reference to establish detection threshold levels. it?s possible to build a wide variety of timers, event detectors, regulators, and voltage monitors using these flexible uncommitted blocks. optimized for low-voltage operation, these devices draw less than 1.6ua total from a 0.8v to 2.5v supply. the op amp and comparator blocks typically continue to function down to less than 0.5v (refout will go into dropout, however). comparator the comparator block is designed for high gain and chatter-free output switching in noisy environments. the comparator inputs have rail-to-rail vin range, and exhibit +/-7.5mv of hysteresis. the only difference between the two device types is in the output stage of the comparator. the ts12011 has a push-pull output and latches in the high state. the ts12012 has an open-drain output, latches in the low state, and can tolerate pull-up voltages higher than the supply (up to 5.5v absolute max above vss/gnd). ts12011 push-pull output driver was designed to minimize supply-current surges while driving 100a loads with an output swing to within 100mv of the supply rails. the ts12011 and the ts12012 can sink 0.5ma and 1.4ma of current, respectively. the ts12011 can source 0.1ma of current. the non-traditional latch function works to detect and latch changes in the input state. if the lhdet control input is enabled, the output will latch high (low for the ts12012) whenever the differential input voltage is high enough to force a change in that direction. if the differential voltage is in the wrong direction to force a
ts12011/ts12012 page 10 ts12011/12 rev. 1.0 change, the comparator stays active and waits for the crossing, at which point it will latch in its final state. an internal por circuit ensures that the latch powers up in the ?comparator active? state if lhdet is low when vdd is first applied. latch truth table ? ts12011 lhdet cmpout initial state cmpin+ to cmpin- difference voltage cmpout high x n/a normal operation low high x high (latched) low low negative low (comparator active) low low positive high (latched) x = don?t care latch truth table ? ts12012 lhdet cmpout initial state cmpin+ to cmpin- difference voltage cmpout high x n/a normal operation low low x low (latched) low high positive high (comparator active) low high negative low (latched) x = don?t care reference the ts12011 and ts12012 on-board 0.58v 4.5% reference voltage can source and sink 0.1a and 0.1a of current and can drive a capacitive load less than 50pf and greater than 50nf with a maximum capacitive load of 250nf. the higher the capacitive load, the lower the noise on the reference voltage and the longer the time needed for the reference voltage to respond and become available on the refout pin. with a 250nf capacitive load, the reference voltage will settle to within specifications in approximately 20ms. op amp the ts12011 and ts12012 have a unity-gain stable op-amp with a gbwp of 15khz, a slew rate of 6v/ms, and can drive a capacitive load up to 50pf. the common mode input voltage range extends from v ss to v dd and the input bias current and offset current are less than 20na and 2na, respectively. op-amp stability the ts12011 and ts12012 op-amp is able to drive up to 50pf of capacitive load and still maintain stability in a unity-gain configuration with a 15khz gbwp and a phase margin of 70 degrees with a 100k //20pf output load. though the ts12011 and ts12012 address low frequency applications, it is essential to perform good layout techniques in order to minimize board leakage and stray capacitance, which is of a concern in low power, high impedance circuits. for instance, a 10m resistor coupled with a 1pf stray capacitance can lead to a pole at approximately 15khz, which is the gbwp of the device. if stray capacitance is unavoidable, a feedback c apacitor can be placed in parallel with the feedback resistor. applications information comparator hysteresis as a result of circuit noise or unintended parasitic feedback, many analog comparators often break into oscillation within their li near region of operation especially when the applied differential input voltage approaches 0v (zero volt). externally-introduced hysteresis is a well-established technique for stabilizing analog comparator behavior and requires external components. as shown in figure 1, adding comparator hysteresis creates two trip points: v thr (for the rising input voltage) and v thf (for the falling input voltage). the hysteresis band (v hb ) is defined as the voltage difference between the two trip points. when a comparator?s input voltages are equal, hysteresis effectively forces one comparator input to move quickly past the other input, moving the input out of the region where oscillation occurs. figure 1 illustrates the case in which an in- input is a fixed voltage and an in+ is varied. if the input signals were reversed, the figure would be the same with an inverted output. to save cost and external pcb area, an internal 7.5mv hysteresis circuit was added to the ts12011 and ts12012.
ts12011/ts12012 ts12011/12 rev. 1.0 page 11 adding hysteresis to the ts12011 push-pull output option additional hysteresis can be generated with three external resistors using positive feedback as shown in figure 2. unfortunately, this method also reduces the hysteresis response time. the procedure to calculate the resistor values for the ts12011 is as follows: 1) setting r2. as the leakage current at the in pin is less than 20na, the current through r2 should be at least 150na to minimize offset voltage errors caused by the input leakage current. the current through r2 at the trip point is (v refout - v compout )/r2. in solving for r2, there are two formulas ? one each for the two possible output states: r2 = v refout /i r2 or r2 = (v dd - v refout )/i r2 from the results of the two formulae, the smaller of the two resulting resistor values is chosen. for example, when using the ts12011 (v refout = 0.58v) at a v dd = 2.5v and if i r2 = 150na is chosen, then the formulae above produce two resistor values: 3.87m ? and 12.8m ? - a 4.02m ? standard value for r2 is selected. 2) next, the desired hysteresis band (v hysb ) is set. in this example, v hysb is set to 100mv. 3) resistor r1 is calculated according to the following equation: r1 = r2 x (v hysb /v dd ) and substituting the values selected in 1) and 2) above yields: r1 = 4.02m ? x (100mv/2.5v) = 160.8k ? . the 160k ? standard value for r1 is chosen. 4) the trip point for compin+ rising (v thr ) is chosen such that v thr > v refout x (r1 + r2)/r2 (v thf is the trip point for v compin+ falling). this is the threshold voltage at which the comparator switches its output from low to high as v compin+ rises above the trip point. in this example, v thr is set to 2. 5) with the v thr from step 4 above, resistor r3 is then computed as follows: r3 = 1/[v thr /(v refout x r1) - (1/r1) - (1/r2)] r3 = 1/[2v/(0.58v x 160k ? ) - (1/160k ? ) - (1/4.02m ? )] = 66.43k ? in this example, a 69.8k ? , 1% standard value resistor is selected for r3. 6) the last step is to verify the trip voltages and hysteresis band using the standard resistance values: for v compin+ rising: v thr = v refout x r1 [(1/r1) + (1/r2) + (1/r3)] = 1.93v for v compin+ falling: v thf = v thr - (r1 x v dd /r2) = 1.83v and hysteresis band = v thr ? v thf = 100mv figure 2. using three resistors introduces additional hysteresis in the ts12011 figure 1. ts12011/ts12012 threshold hysteresis band
ts12011/ts12012 page 12 ts12011/12 rev. 1.0 adding hysteresis to the ts12012 open-drain option the ts12012 has open-drai n output and requires an external pull-up resistor to v dd as shown in figure 3. additional hysteresis can be generated using positive feedback; however, the formulae differ slightly from those of the push-pull option ts12011. the procedure to calculate the resistor values for the ts12012 is as follows: 1) as in the previous se ction, resistor r2 is chosen according to the formulae: r2 = v refout /150na or r2 = (v dd - v refout )/150na - r4 where the smaller of the two resulting resistor values is the best starting value. 2) as before, the des ired hysteresis band (v hysb ) is set to 100mv. 3) next, resistor r1 is then computed according to the following equation: r1 = (r2 + r4) x (v hysb /v dd ) 4) the trip point for v compin+ rising (v thr ) is chosen (again, remember that v thf is the trip point for v compin+ falling). this is the threshold voltage at which the comparator switches its output from low to high as v compin+ rises above the trip point. 5) with the v thr from step 4 above, resistor r3 is computed as follows: r3 = 1/[v thr /(v refout x r1) - (1/r1) - (1/r2)] 6) as before, the last step is to verify the trip voltages and hysteresis band with the standard resistor values used in the circuit: for v compin+ rising: v thr = v refout x r1 x (1/r1+1/r2+1/r3) for v compin+ falling: v thf = v refout x r1 x(1/r1+1/r3+1/(r2+r4)) -(r1/(r2+r4)) x v dd and hysteresis band is given by v thr ? v thf pc board layout and power-supply bypassing while power-supply bypass capacitors are not typically required, it is good engineering practice to use 0.1uf bypass capacitors close to the device?s power supply pins when the power supply impedance is high, the power supply l eads are long, or there is excessive noise on the power supply traces. to reduce stray capacitance, it is also good engineering practice to make signal trace lengths as short as possible. also recommended are a ground plane and surface mount resistors and capacitors. input noise radiated noise is common in low power circuits that require high impedance circuits. to minimize this effect, all traces between the inputs of the comparator or op-amp and passive component networks should be made as short as possible. pilot light flame detector with low-battery lockout circuit the ts12011 can be used to create a pilot flame detector with low-battery lockout circuit as shown in figure 4. the circuit is able to detect when the thermocouple does not detect the pilot flame and when the battery in the circuit drops to 1.39v. this circuit makes use of the op-amp, comparator, and 0.58v reference in the ts12011. in this example, a type r thermocouple is used. it generates a voltage range from 9mv to 17mv that corresponds to a temperature range of 900oc to 1500oc, which is typical of a methane pilot flame. if the pilot flame is removed, the temperature drops; hence, the output voltage generated by the thermocouple is drops to a minimum voltage of 0.1mv that is applied to the non- figure 3. using four resistors introduces additional hysteresis in the ts12012
ts12011/ts12012 ts12011/12 rev. 1.0 page 13 inverting input of the op -amp. this switches the output voltage of the op-am p to a low state and in turn, switches q1 off. if, however, the battery voltage drops from 1.5v to 1.39v, the comparator output will switch from an output high to a low. this will turn off q2 and the output of the op-amp will turn q1 off. the complete circuit consumes approximately 95a of supply current at v dd = 1.5v. figure 4. pilot light flame detector with low-battery lockout circuit
ts12011/ts12012 page 14 ts12011/12 rev. 1.0 figure 5. sawtooth/triangle generator with stable frequency and amplitude
ts12011/ts12012 ts12011/12 rev. 1.0 page 15 figure 6. low-power one-shot and latch circuits
ts12011/ts12012 page 16 ts12011/12 rev. 1.0 figure 7. adjustable buffered reference generators
ts12011/ts12012 silicon laboratories, inc. page 17 400 west cesar chavez, austin, tx 78701 ts12011/12 rev. 1.0 +1 (512) 416-8500 ? www.silabs.com package outline drawing patent notice silicon labs invests in research and development to help our custom ers differentiate in the market with innovative low-power, s mall size, analog-intensive mixed-signal solutions. s ilicon labs' extensive patent portfolio is a testament to our unique approach and wor ld-class engineering team. the information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice. silicon laboratories assumes no responsibility for errors and om issions, and disclaims responsib ility for any consequences resu lting from the use of information included herein. additionally, silicon laborat ories assumes no responsibility for the functioning of undescr ibed features or parameters. silicon laboratories reserves the right to make c hanges without further notice. silicon laboratories makes no warra nty, representation or guarantee regarding the suitability of its pr oducts for any particular purpose, nor does silicon laboratories assume any liability arising out of the application or use of any product or circ uit, and specifically disclaims any and all liability, in cluding without limitation consequential or incidental damages. silicon laboratories products are not designed, intended, or authorized for use in applica tions intended to support or sustain life, or for any other application in wh ich the failure of the silicon laboratories product could create a situation where personal injury or death may occur. should buyer purchase or use silicon laboratories products for any such unintended or unaut horized application, buyer shall indemnify and hold silicon laboratories harmless against all claims and damages. silicon laboratories and silicon labs are tr ademarks of silicon laboratories inc. other p roducts or brandnames mentioned herein are trademarks or re g istered trademarks of their res p ective holders. 10-pin tdfn22 package outline drawing (n.b., drawings are not to scale)
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